Chithunzi cha IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14

Kufotokozera Kwachidule:

Opanga: Infineon Technologies
Gulu lazinthu: Transistors - IGBTs - Single
Tsamba lazambiri:IKW50N65ES5XKSA1
Kufotokozera: IGBT TRENCH 650V 80A TO247-3
Mkhalidwe wa RoHS: Wogwirizana ndi RoHS


Tsatanetsatane wa Zamalonda

Mawonekedwe

Mapulogalamu

Zolemba Zamalonda

♠ Kufotokozera Zamalonda

Mtundu wa Zamalonda Mtengo wa Makhalidwe
Wopanga: Infineon
Gulu lazinthu: IGBT Transistors
Zamakono: Si
Phukusi / Mlandu: KUTI-247-3
Mtundu Wokwera: Kudzera mu Hole
Kusintha: Wokwatiwa
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Maximum Gate Emitter Voltage: 20 V
Wosonkhanitsa Wosalekeza Pakali pano pa 25 C: 80 A
Pd - Kutaya Mphamvu: 274 W
Kutentha Kochepa Kwambiri: -40 C
Kutentha Kwambiri Kwambiri: + 175 C
Mndandanda: TRENCHSTOP 5 S5
Kuyika: Chubu
Mtundu: Malingaliro a kampani Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Kutalika: 20.7 mm
Utali: 15.87 mm
Mtundu wa malonda: IGBT Transistors
Kuchuluka Kwa Paketi Ya Factory: 240
Gulu laling'ono: Zithunzi za IGBT
Dzina lamalonda: TRENCHSTOP
M'lifupi: 5.31 mm
Gawo # Zilankhulo: IKW50N65ES5 SP001319682
Kulemera kwa Unit: 0.213537 oz

 


  • Zam'mbuyo:
  • Ena:

  • Kupereka kwa HighspeedS5technology
    •Highspeedsmoothswitchingdeviceforhard&softswitching
    •VeryLowVCEsat,1.35Vatnominalcurrent
    •Plugandplay m'malo mwamibadwo yakaleIGBTs
    •650Vbreakdownvoltage
    •LowgatechargeQG
    •IGBTcopacked withfullratedRAPID1fastantiparalleldiode
    •Kutentha kwapamwamba kwambiri175°C
    •Woyenerera molingana ndiJEDECfortargetapplications
    •Pb-freeleadplating;RoHS imagwirizana
    •CompleteproductrumandPSpiceModels: http://www.infineon.com/igbt/

    •Resonantconverters
    •Uninterruptible powersupplies
    • Otembenuza ma welding
    •Midtohighrangeswitchingfrequencyconverters

    Zogwirizana nazo