SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Kufotokozera Zamalonda
| Mtundu wa Zamalonda | Mtengo wa Makhalidwe |
| Wopanga: | Vishay |
| Gulu lazinthu: | MOSFET |
| RoHS: | Tsatanetsatane |
| Zamakono: | Si |
| Mtundu Wokwera: | SMD/SMT |
| Phukusi/Mlandu: | SC-89-6 |
| Transistor polarity: | N-Channel, P-Channel |
| Nambala Yamakanema: | 2 Channel |
| Vds - Mphamvu ya Kukhetsa-Magwero Owonongeka: | 60 v |
| Id - Kukhetsa Kosalekeza Panopa: | 500 mA |
| Rds On - Drain-Source Resistance: | 1.4 omm, 4 omm |
| Vgs - Mphamvu ya Gate-Source: | 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Malipiro a Gate: | 750 pC, 1.7 nC |
| Kutentha Kochepa Kwambiri: | -55 C |
| Kutentha Kwambiri Kwambiri: | + 150 C |
| Pd - Kutaya Mphamvu: | 280mW |
| Njira ya Channel: | Kuwongola |
| Dzina lamalonda: | TrenchFET |
| Kuyika: | Reel |
| Kuyika: | Dulani Tepi |
| Kuyika: | MouseReel |
| Mtundu: | Vishay Semiconductors |
| Kusintha: | Zapawiri |
| Forward Transconductance - Min: | 200 mS, 100 mS |
| Kutalika: | 0.6 mm |
| Utali: | 1.66 mm |
| Mtundu wa malonda: | MOSFET |
| Mndandanda: | SI1 |
| Kuchuluka Kwa Paketi Ya Factory: | 3000 |
| Gulu laling'ono: | Zithunzi za MOSFET |
| Mtundu wa Transistor: | 1 N-Channel, 1 P-Channel |
| Nthawi Yeniyeni Yoyimitsa Kuyimitsa: | 20 ns, 35 n |
| Nthawi Yeniyeni Yoyatsa: | 15 ns, 20 n |
| M'lifupi: | 1.2 mm |
| Gawo # Zilankhulo: | Chithunzi cha SI1029X-GE3 |
| Kulemera kwa Unit: | 32 mg pa |
• Halogen-free Molingana ndi IEC 61249-2-21 Tanthauzo
• TrenchFET® Power MOSFETs
• Mapazi Aang'ono Kwambiri
• Kusintha Kwapamwamba Kwambiri
• Kukanika Kochepa:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Malo Otsika: ± 2 V (mtundu.)
• Kuthamanga Kwachangu: 15 ns (typ.)
• Gate-Source ESD Otetezedwa: 2000 V
• Mogwirizana ndi RoHS Directive 2002/95/EC
• Bwezerani Digital Transistor, Level-Shifter
• Kachitidwe ka Battery
• Power Supply Converter Circuits
