Mtundu watsopano wa hafnium-based ferroelectric memory chip wopangidwa ndikupangidwa ndi Liu Ming, Academician wa Institute of Microelectronics, waperekedwa ku IEEE International Solid-State Circuits Conference (ISSCC) mu 2023, gawo lapamwamba kwambiri la mapangidwe ophatikizika adera.
Memory yokhazikika yosasinthika (eNVM) ikufunika kwambiri tchipisi ta SOC mumagetsi ogula, magalimoto odziyimira pawokha, kuyang'anira mafakitale ndi zida zam'mphepete pa intaneti ya Zinthu. Ferroelectric memory (FeRAM) ili ndi maubwino odalirika kwambiri, kugwiritsa ntchito mphamvu zotsika kwambiri, komanso kuthamanga kwambiri. Amagwiritsidwa ntchito kwambiri muzojambula zambiri za deta mu nthawi yeniyeni, kuwerenga ndi kulemba pafupipafupi, kugwiritsa ntchito mphamvu zochepa komanso zinthu zophatikizidwa za SoC/SiP. Ferroelectric kukumbukira zochokera PZT chuma chakwaniritsa kupanga misa, koma zinthu zake n'zosemphana ndi luso CMOS ndi zovuta kufooketsa, zikubweretsa ndondomeko chitukuko cha chikhalidwe kukumbukira ferroelectric kwambiri amalepheretsa, ndi ophatikizidwa kusakanikirana akufunika osiyana kupanga mzere thandizo, zovuta kutchuka pamlingo waukulu. Kuchepa kwa kukumbukira kwatsopano kwa hafnium-based ferroelectric memory komanso kugwirizanitsa kwake ndi ukadaulo wa CMOS kumapangitsa kuti ikhale malo ofufuza omwe amakhudzidwa kwambiri ndi maphunziro ndi mafakitale. Memory ya ferroelectric yochokera ku Hafnium yawonedwa ngati njira yofunikira yachitukuko cham'badwo wotsatira wa kukumbukira kwatsopano. Pakali pano, kafukufuku wa chikumbutso cha ferroelectric chochokera ku hafnium akadali ndi mavuto monga kusakwanira kwa unit, kusowa kwa mapangidwe a chip okhala ndi zotumphukira zonse, komanso kutsimikiziranso kwa magwiridwe antchito a chip, omwe amalepheretsa kugwiritsa ntchito kwake mu eNVM.
Poganizira zovuta zomwe zimayang'anizana ndi makumbukidwe ophatikizidwa a hafnium-based ferroelectric memory, gulu la Academician Liu Ming wochokera ku Institute of Microelectronics apanga ndikukhazikitsa megab-magnitude FeRAM test chip kwa nthawi yoyamba padziko lapansi kutengera nsanja yayikulu yophatikizira ya hafnium-based ferroelectric memory, yogwirizana ndi CMOS-ferroelectric integration, yogwirizana ndi CMOS-ferroelectric integration. capacitor mu 130nm CMOS ndondomeko. ECC-yothandizidwa ndi kulemba ma drive circuit yozindikira kutentha ndi dera lovutirapo la amplifier kuti athetseretu pompopompo akufunsidwa, ndipo kukhazikika kwa 1012 cycle durability ndi 7ns kulemba ndi 5ns kuwerenga nthawi zimakwaniritsidwa, zomwe ndi milingo yabwino kwambiri yomwe yanenedwa pano.
Pepala lakuti "A 9-Mb HZO-based Embedded FeRAM yokhala ndi 1012-Cycle Endurance ndi 5/7ns Read/Write pogwiritsa ntchito ECC-Assisted Data Refresh" imachokera pa zotsatira ndipo Offset-Canced Sense Amplifier "inasankhidwa ku ISSCC 2023, ndipo chipcho chinasankhidwa mu ISSCC kuti iwonetsedwe koyamba ku ISSCC. wolemba pepala, ndipo Liu Ming ndiye mlembi wofanana.
Ntchitoyi ikuthandizidwa ndi National Natural Science Foundation ya China, National Key Research and Development Programme ya Unduna wa Sayansi ndi Ukadaulo, ndi B-Class Pilot Project ya China Academy of Sciences.
(Chithunzi cha 9Mb Hafnium-based FeRAM chip ndi chip performance test)
Nthawi yotumiza: Apr-15-2023
