MBT3904DW1T1G Bipolar Transistors - BJT 200mA 60V Dual NPN
♠ Kufotokozera Zamalonda
Mtundu wa Zamalonda | Mtengo wa Makhalidwe |
Wopanga: | onse |
Gulu lazinthu: | Bipolar Transistors - BJT |
RoHS: | Tsatanetsatane |
Mtundu Wokwera: | SMD/SMT |
Phukusi / Mlandu: | SC-70-6 |
Transistor polarity: | NPN |
Kusintha: | Zapawiri |
Collector- Emitter Voltage VCEO Max: | 40 v |
Collector- Base Voltage VCBO: | 60 v |
Emitter-Base Voltage VEBO: | 6 v |
Collector-Emitter Saturation Voltage: | 300 mv |
Maximum DC Otolera Panopa: | 200 mA |
Pd - Kutaya Mphamvu: | 150 mW |
Pezani Bandwidth Product fT: | 300 MHz |
Kutentha Kochepa Kwambiri: | -55 C |
Kutentha Kwambiri Kwambiri: | + 150 C |
Mndandanda: | MBT3904DW1 |
Kuyika: | Reel |
Kuyika: | Dulani Tepi |
Kuyika: | MouseReel |
Mtundu: | onse |
Wotolera Masiku Ano: | -2 A |
DC Collector/Base Gain hfe Min: | 40 |
Kutalika: | 0.9 mm |
Utali: | 2 mm |
Mtundu wa malonda: | BJTs - Bipolar Transistors |
Kuchuluka Kwa Paketi Ya Factory: | 3000 |
Gulu laling'ono: | Transistors |
Zamakono: | Si |
M'lifupi: | 1.25 mm |
Gawo # Zilankhulo: | Mtengo wa MBT3904DW1T3G |
Kulemera kwa Unit: | 0.000988 oz |
• hFE, 100−300 • Low VCE(sat), ≤ 0.4 V
• Kufewetsa Mapangidwe Ozungulira
• Amachepetsa Malo a Board
• Amachepetsa Kuwerengera Kwagawo
• Ikupezeka mu 8 mm, 7−inch/3,000 Unit Tape ndi Reel
• S ndi NSV Prefix for Automotive and Other Applications Require Site Site and Control Requirements;AEC−Q101 Woyenerera ndi PPAP Wokhoza
• Zida izi ndi Pb−Free, Halogen Free/BFR Zaulere ndipo zimagwirizana ndi RoHS