Chithunzi cha IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Kufotokozera Zamalonda
| Mtundu wa Zamalonda | Mtengo wa Makhalidwe |
| Wopanga: | Infineon |
| Gulu lazinthu: | IGBT Transistors |
| Zamakono: | Si |
| Phukusi / Mlandu: | KUTI-247-3 |
| Mtundu Wokwera: | Kudzera mu Hole |
| Kusintha: | Wokwatiwa |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Maximum Gate Emitter Voltage: | 20 V |
| Wosonkhanitsa Wosalekeza Pakali pano pa 25 C: | 80 A |
| Pd - Kutaya Mphamvu: | 275W |
| Kutentha Kochepa Kwambiri: | -40 C |
| Kutentha Kwambiri Kwambiri: | + 175 C |
| Mndandanda: | Trenchstop IGBT5 |
| Kuyika: | Chubu |
| Mtundu: | Malingaliro a kampani Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Kutalika: | 20.7 mm |
| Utali: | 15.87 mm |
| Mtundu wa malonda: | IGBT Transistors |
| Kuchuluka Kwa Paketi Ya Factory: | 240 |
| Gulu laling'ono: | Zithunzi za IGBT |
| Dzina lamalonda: | TRENCHSTOP |
| M'lifupi: | 5.31 mm |
| Gawo # Zilankhulo: | IKW50N65EH5 SP001257944 |
| Kulemera kwa Unit: | 0.213383 oz |
HighspeedH5technology kupereka
•Kuchita Bwino Kwambiri-Kusintha movutikira komanso maulamuliro omveka bwino
•Plugandplay m'malo mwamibadwo yakaleIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTyodzaza ndi-ovoteredwa-RAPID1fastandsoftantiparallel diode
•Kutentha kwapamwamba kwambiri175°C
•Woyenerera molingana ndiJEDECfortargetapplications
•Pb-freeleadplating;RoHS imagwirizana
•CompleteproductrumandPSpiceModels: http://www.infineon.com/igbt/
•Uninterruptible powersupplies
•Zosintha za dzuwa
• Otembenuza ma welding
•Midtohighrangeswitchingfrequencyconverters
