FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
♠ Kufotokozera Zamalonda
| Mtundu wa Zamalonda | Mtengo wa Makhalidwe |
| Wopanga: | onse |
| Gulu lazinthu: | MOSFET |
| Zamakono: | Si |
| Mtundu Wokwera: | Kudzera mu Hole |
| Phukusi / Mlandu: | KUTI-251-3 |
| Transistor polarity: | N-Channel |
| Nambala Yamakanema: | 1 Channel |
| Vds - Mphamvu ya Kukhetsa-Magwero Owonongeka: | 600 V |
| Id - Kukhetsa Kosalekeza Panopa: | 1.9 A |
| Rds On - Drain-Source Resistance: | 4.7 uwu |
| Vgs - Mphamvu ya Gate-Source: | 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Malipiro a Gate: | 12 nc |
| Kutentha Kochepa Kwambiri: | -55 C |
| Kutentha Kwambiri Kwambiri: | + 150 C |
| Pd - Kutaya Mphamvu: | 2.5W |
| Njira ya Channel: | Kuwongola |
| Kuyika: | Chubu |
| Mtundu: | onsemi / Fairchild |
| Kusintha: | Wokwatiwa |
| Nthawi Yogwa: | 28ns ndi |
| Forward Transconductance - Min: | 5 S |
| Kutalika: | 6.3 mm |
| Utali: | 6.8 mm |
| Mtundu wa malonda: | MOSFET |
| Nthawi Yokwera: | 25 ns |
| Mndandanda: | Mtengo wa FQU2N60C |
| Kuchuluka Kwa Paketi Ya Factory: | 5040 |
| Gulu laling'ono: | Zithunzi za MOSFET |
| Mtundu wa Transistor: | 1 N-Channel |
| Mtundu: | MOSFET |
| Nthawi Yeniyeni Yoyimitsa Kuyimitsa: | 24 ns |
| Nthawi Yeniyeni Yoyatsa: | 9 ndi |
| M'lifupi: | 2.5 mm |
| Kulemera kwa Unit: | 0.011993 oz |
♠ MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Mphamvu yokwezera njira ya N−Channel MOSFET imapangidwa pogwiritsa ntchito ukadaulo wa onyomi ndi ukadaulo wa DMOS.Ukadaulo wapamwambawu wa MOSFET wakonzedwa makamaka kuti uchepetse kukana kwa boma, komanso kuti upereke magwiridwe antchito apamwamba komanso mphamvu zamphamvu za avalanche.Zidazi ndizoyenera magetsi osinthika, ma activ power factor correction (PFC), ndi ma ballasts amagetsi.
• 1.9 A, 600 V, RDS(pa) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Anayesedwa
• Zida izi ndi Zopanda Halid ndipo Zimagwirizana ndi RoHS
