FDV301N MOSFET N-Ch Digital
♠ Kufotokozera Zamalonda
| Mtundu wa Zamalonda | Mtengo wa Makhalidwe |
| Wopanga: | onse |
| Gulu lazinthu: | MOSFET |
| RoHS: | Tsatanetsatane |
| Zamakono: | Si |
| Mtundu Wokwera: | SMD/SMT |
| Phukusi / Mlandu: | SOT-23-3 |
| Transistor polarity: | N-Channel |
| Nambala Yamakanema: | 1 Channel |
| Vds - Mphamvu ya Kukhetsa-Magwero Owonongeka: | 25 v |
| Id - Kukhetsa Kosalekeza Panopa: | 220 mA |
| Rds On - Drain-Source Resistance: | 5 okhm |
| Vgs - Mphamvu ya Gate-Source: | 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mv |
| Qg - Malipiro a Gate: | 700 pc |
| Kutentha Kochepa Kwambiri: | -55 C |
| Kutentha Kwambiri Kwambiri: | + 150 C |
| Pd - Kutaya Mphamvu: | 350 mW |
| Njira ya Channel: | Kuwongola |
| Kuyika: | Reel |
| Kuyika: | Dulani Tepi |
| Kuyika: | MouseReel |
| Mtundu: | onsemi / Fairchild |
| Kusintha: | Wokwatiwa |
| Nthawi Yogwa: | 6 ns |
| Forward Transconductance - Min: | 0.2 S |
| Kutalika: | 1.2 mm |
| Utali: | 2.9 mm |
| Zogulitsa: | Chizindikiro chaching'ono cha MOSFET |
| Mtundu wa malonda: | MOSFET |
| Nthawi Yokwera: | 6 ns |
| Mndandanda: | Chithunzi cha FDV301N |
| Kuchuluka Kwa Paketi Ya Factory: | 3000 |
| Gulu laling'ono: | Zithunzi za MOSFET |
| Mtundu wa Transistor: | 1 N-Channel |
| Mtundu: | FET |
| Nthawi Yeniyeni Yoyimitsa Kuyimitsa: | 3.5 ns |
| Nthawi Yeniyeni Yoyatsa: | 3.2 ns |
| M'lifupi: | 1.3 mm |
| Gawo # Zilankhulo: | Chithunzi cha FDV301N_NL |
| Kulemera kwa Unit: | 0.000282 oz |
♠ Digital FET, N-Channel FDV301N, FDV301N-F169
Transistor iyi ya N−Channel logic level enhancement field effect transistor imapangidwa pogwiritsa ntchito ukadaulo wa onsemi, kachulukidwe ka maselo ambiri, ukadaulo wa DMOS.Kachulukidwe kokwezeka kameneka kamapangidwa makamaka pofuna kuchepetsa kukana kwa boma.Chipangizochi chapangidwira makamaka kugwiritsa ntchito magetsi otsika ngati cholowa m'malo mwa ma transistors a digito.Popeza zotsutsa zokondera sizofunika, N−channel FET iyi imatha kusintha ma transistors angapo a digito, okhala ndi mikhalidwe yosiyanasiyana yotsutsa.
• 25 V, 0,22 A Yopitirira, 0,5 A Peak
♦ RDS(pa) = 5 @ VGS = 2.7 V
♦ RDS(pa) = 4 @ VGS = 4.5 V
• Zofunikira Zotsika Kwambiri Pakhomo Loyendetsa Kulola Kugwira Ntchito Mwachindunji m'mabwalo a 3 V.VGS (th) <1.06 V
• Gate−Source Zener ya ESD Ruggedness.> 6 kV Thupi la Munthu
• Sinthani Ma Transistor Angapo A digito a NPN ndi One DMOS FET
• Chida ichi ndi Pb−Free komanso chaulere cha Halide
